Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has ordered ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
For second-quarter 2016, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $75.3m, down 8.6% on $78m last quarter and 42.7% on $131.4m a year ago, consistent with ...
Tags: Veeco, LED industry
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has announced the appointment of Kathleen Bayless to its board of directors and its audit committee. From 2009 until her retirement in 2015, ...
Tags: Veeco, Epitaxialprocess equipment
With the re-grouping of teams from III-V Lab (the joint Alcatel-Lucent, Thales and CEA-Leti industrial research laboratory), Almae Technologies SAS is taking over III-V Lab's facilities at Marcoussis, which is sited on the Plateau de Saclay ...
Tags: CEA-Leti, III-V Lab, laser components
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that optoelectronics manufacturer Xiamen Changelight Co Ltd of Xiamen, Fujian Province, China has finalized qualification of its AIX R6 Close Coupled ...
Tags: Aixtron SE, Changelight, MOCVD
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...