In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
Gallium arsenide (GaAs) IC foundry Advanced Wireless Semiconductor Company (AWSC) of Tainan Science-based Industrial Park, Taiwan has announced plans to repurchase five million shares (3.56% of its outstanding stock) at between NT$36 ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added two new packaged driver amplifiers to its expanding product range. 2-9GHz driver amplifier with 15dB of gain The CMD232C3 gallium arsenide ...
Tags: Custom MMIC, GaAs, driver amplifier
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
For fiscal first-quarter 2017 (to 2 July 2016), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $697.6m, up ...
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two RF switches suitable for the Internet of Things (IoT) applications including the connected home. In addition to the ...
For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...
Tags: raw materials
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...
Tags: MMICs, microwave, millimeter-wave modules
The US Army Research Laboratory (ARL) has entered into a collaborative alliance via a $1.1m grant with Raytheon Company of Waltham, MA, USA to develop Scalable, Agile, Multimode, Front End Technology (SAMFET) for the Army's Next Generation ...
Tags: ARL, next-generation radar systems
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that optoelectronics manufacturer Xiamen Changelight Co Ltd of Xiamen, Fujian Province, China has finalized qualification of its AIX R6 Close Coupled ...
Tags: Aixtron SE, Changelight, MOCVD