China shipped 9.54 million wearable devices in the second quarter of 2016, an increase of 13.2% from the previous quarter and up 81.4% from a year earlier, according to IDC's China Wearable Device Market Quarterly Tracker report. Shipments ...
MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has introduced five monolithic microwave integrated circuit ...
Slowdown-scarred, growth-seeking Chinese television manufacturers are shifting their focus to intelligent TVs and overseas markets. Five key reasons characterize the trend: falling sales, the rise of smartphones and personal computers as ...
Tags: intelligent TVs, computers
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) says that its Low Power Wireless business unit (formerly GreenPeak Technologies until ...
Tags: Qorvo, Low Power Wireless business unit, ZigBee 3.0 certification
The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MATA-37644, a multi-rate 28G CDR (clock & data ...
Tags: MACOM, MATA-37644, MALD-37645
Shipments of handsets, mostly smartphone models, by Taiwan-based handset makers are expected to peak at 14.49 million units in the third quarter of 2016 before sliding to 13.47 million units in the fourth quarter, according to an estimate ...
Tags: handset, smartphone
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
RASIRC Inc of San Diego, CA, USA (whose products purify and deliver ultra-pure liquids and gases) has renewed its funding agreement with the University of California, San Diego (UCSD) for on-going semiconductor processing research. The gift ...
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received an order for its 25th GENxplor R&D molecular beam epitaxy (MBE) system. Introduced in August 2013, the GENxplor system is said to be ...
Tags: Veeco MBE, GENxplor system