RF Micro Devices Inc of Greensboro, NC, USA says that its gallium nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology, which recognizes technology that helps ...
Momentive Performance Materials Quartz Inc. (MPM) has increased and expanded its manufacturing capacity of tantalum carbide coatings (TaC) in response to the larger demand for silicon carbide power (SiC) devices and increased need for ...
Tags: Coating, Construction, Decoration
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
Changing the texture and surface characteristics of a semiconductor material at the nanoscale can influence the way that neural cells grow on the material. The finding stems from a study performed by researchers at North Carolina State ...
Tags: Consumer Electronics, Electronics, Semiconductor Material
Soraa’s third generation (Gen3) GaN on GaN™ LED achieves world-record setting wall-plug-efficiency, outperforming the nearest competitor by 20% at normal operating conditions. In just one year, Soraa has achieved a remarkable ...
Tags: wall-plug-efficiency, color and whiteness rendering, innovation
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that its Spatium technology achieves unprecedented levels of Ka-band solid-state power, bandwidth and efficiency, providing greater broadband capacity and ...
Tags: Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has added to its GaN in Plastic series with a wideband packaged ...
Tags: military radar, reliable high-voltage operation, CW modes
The French consulting company Yole Développement releases this month its Sapphire Applications and Market: From LED to Consumer Electronics report. This technology & market report provides a detailed analysis of the status and ...
At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - ...
Tags: Transphorm GaN-on-Si, Electrical
In the last century, silicon-based power electronics (which control or convert electrical energy into usable power) transformed the computing, communication, electric vehicle and energy industries and gave consumers and businesses more ...
Tags: Electric Vehicle, Semiconductors
With CATV and broadband services becoming integral parts of service providers bundles, network infrastructure is evolving rapidly to keep up with growing demand, notes the Strategy Analytics GaAs and Compound Semiconductor Technology (GaAs) ...
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
At 29th annual IEEE Applied Power Electronics Conference & Exposition (APEC 2014) in Fort Worth, TX, USA (16-20 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
Scientists at the US Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet LEDs based on GaInN/GaN, AlGaN/GaN and AlInN/GaN quantum wells. It is reckoned that ...