wall plug efficiency articles & resources on Made-in-China.com

Flip-Chip Hybrid External-Cavity Laser Array on Silicon Platform

Oct 8, 2016

Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...

Tags: Oracle Networking Group, laser array

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

II-VI Inc Presenting New Laser Modules at Photonics West

Feb 14, 2016

In booth 2223 (Hall C) at SPIE Photonics West 2016 in San Francisco (16-18 February), engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA is presenting a broad portfolio of products from several of its ...

Tags: Laser Modules, Photonics West

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

Plessey Introduces New Blue Die for Mid and High Power Applications

Nov 12, 2015

Plessey today announced the release of its range of MaGIC™ LED die, manufactured on the company’s patented GaN-on-Silicon technology. The blue die, sometimes referred to as blue pump for their ability to pump phosphor to a white ...

Tags: Plessey, LED die, LED lighting

Efficient Combination of Quantum Cascade Laser and Detectors

Sep 11, 2015

Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...

Tags: Quantum cascade detectors InP InGaAs MBE

White LEDs Using Blue LED Chips to Disappear?

Aug 18, 2015

“It is only a matter of time before white LEDs using blue LED chips will disappear from the market,” said Shuji Nakamura at a forum on GaN technology in July organized by Nikkei Asian Review. The comment from the inventor of ...

Tags: LED chip, Blue LED, Purple LEDs

Semi-Polar InGaN Laser Diodes

Apr 7, 2015

University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...

Tags: Indium, InGaN substrates, Electrical

SETi Doubles Efficiency and Ships Samples

Feb 11, 2015

Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA, which develops and manufactures deep-ultraviolet (DUV) LED devices and modules, has started shipping samples of its UVC LEDs with 2.5mW of optical power at 265–280nm. First ...

Tags: UVC LEDs, Sensor Electronic

Researchers in Taiwan Have Produced Zinc Oxide/Gallium Nitride Nano

May 29, 2014

Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...

Tags: LED Fabrication, Zinc Oxide

Sun Yat-sen University in China has improved the wall-plug efficiency

Mar 31, 2014

Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...

Tags: InGaN LEDs, Silicon, semiconductor

Soraa's Gen3 Gan on GaN LED Achieves World-Record Setting Wall-Plug-Efficiency

Mar 12, 2014

Soraa’s third generation (Gen3) GaN on GaN™ LED achieves world-record setting wall-plug-efficiency, outperforming the nearest competitor by 20% at normal operating conditions. In just one year, Soraa has achieved a remarkable ...

Tags: wall-plug-efficiency, color and whiteness rendering, innovation

UCSB Have Developed Wavelength INAS QD Lasers

Feb 21, 2014

University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...

Tags: Silicon, `Quantum Dot Lasers

Epistar Are Developing a Method to Transfer InGaN

Feb 21, 2014

Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...

Tags: InGaN LED, Ceramic Substrate

The New Technologies Will Raise Light Extraction Efficiency and LED Performance

Jan 15, 2014

Epistar Corp (Taiwan’s largest LED chipmaker) says that lots of forward-looking technologies have been developed and now applied to LED chip production, such as novel transparent conductive thin film, compound mirror structures, and a ...

Tags: Epistar, IR LED

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