Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems for communications, defense & security, aerospace and industrial markets) has entered into a definitive ...
Tags: Microsemi, Vitesse, Electronics
The computing and telecoms industries are developing systems to store information in the cloud and analyze enormous amounts of data. IBM Research says that it has demonstrated what could be a key step toward commercializing this next ...
Tags: IBM, CMOS.Electronics
In booth #1225 at the Optical Fiber Conference conference & exposition (OFC 2015) in Los Angeles (24-26 March), GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components for ...
Tags: TFPS, datacom demo, Electronics
Professor Martin Kuball of the University of Bristol's School of Physics in the UK is one of 19 people to receive the UK Royal Society's Wolfson Research Merit Award Jointly funded by the Wolfson Foundation and the UK's Department for ...
Tags: Wolfson, devices, Electronics
With the European Union (EU) deciding to remove three China-based PV module makers from the Minimum Import Price (MIP) framework for suspected circumvention of minimum import pricing and import quotas set in 2013, other China-based PV ...
Tags: PV Module, solar cell
EV Group (EVG) of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has introduced two new configurations to its EVG580 ComBond series of automated ...
Tags: EV Group, wafer bonding systems
At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: APEC 2015, GaN Power Devices
Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
The US Department of Commerce earlier this year preliminarily lowered an average anti-dumping and anti-subsidization tariff rate imposed on China-made PV modules in 2012 to 17.5% from the original 30% and will make a final decision in ...
Tags: Solar Cell, PV Modules
The Canadian International Trade Tribunal (CITT) has imposed preliminary anti-dumping and anti-subsidization tariffs of 9-286% on crystalline silicon PV modules and laminates (semi-finished PV modules) as well as thin-film PV modules ...
Walking around the recent Mobile World Congress and its parallel show Four Years From Now, it was hard to miss all the cars parked in the show booths. Over the last few years, cars have had an increasingly noticeable presence at the ...
Some first-tier China-based PV makers reportedly plan to stop production of crystalline silicon solar cells and then focus operation on producing PV modules and undertaking PV EPC (engineering, procurement, construction) projects, Taiwan PV ...
Tags: PV Modules, PV Power