For second-quarter 2012,GigOptix Inc of San Jose,CA,USA(a fabless supplier of semiconductor and optical components including modulator and laser drivers and transimpedance amplifier ICs based on III-V materials)has reported an 11th ...
Tags: GigOptix Inc, secondQuarter 2012
The Millimeter-Wave Electronics Group of the Swiss Federal Institute of Technology(ETH)Zurich has been exploring the use of Teflon amorphous fluoropolymer(AF)as an interlayer dielectric for III-V double heterostructure bipolar ...
Tags: Teflon, transistor, AF, DHBT
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
Cree Inc of Durham,NC,USA has released an updated process design kit(PDK)based on Agilent Technologies'Advanced Design System(ADS)software that will provide microwave and RF design engineers with a comprehensive suite of design and ...
Tags: Cree, GaN-on-SiC, HEMT, PDK, Software
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA is showcasing its broad portfolio of products and technologies for the wireless and wired ...
Cree has released an updated,advanced process design kit(PDK)based on Agilent Technologies'Advanced Design System(ADS)software that will provide microwave and RF design engineers with a comprehensive suite of design and simulation tools for ...
Tags: Cree, Agilent Technologies, GaN-on-SiC HEMT Devices, PDK, ADS
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK says that its Sigma fxP physical vapor deposition (PVD) system had been selected by a Chinese foundry dedicated to producing RF ...
Tags: SPTS PVD GaAs substrates
For first-quarter 2012,GigOptix Inc of San Jose,CA,USA(a fabless supplier of semiconductor and optical components for high-speed information streaming)has reported a tenth consecutive quarter of sequential growth in product ...
Tags: GigOptix, product revenue for 10th quarter grows, up 7 percent
Freescale Semiconductor of Austin,TX,USA has announced a new reference design for small office/home office(SOHO)base-station applications that is partially powered by two gallium arsenide(GaAs)monolithic microwave integrated ...
Tags: Freescale, GaAs, MMICs, the Freescale GaAs MMIC devices