Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAAP-011247 and MAAP-011248 distributed power ...
Tags: MACOM, power amplifiers
Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has introduced highly integrated Rx/Tx converters that improve the reliability, cost, and time to market for microwave ...
Tags: ADI, Rx/Tx converters
Exhibiting for the first time at an electronic warfare (EW) exhibition in the United Arab Emirates (UAE), on stand 26 at the Electronic Warfare GCC Conference (EW GCC 2016) in Abu Dhabi (25-26 October) UK-based TMD Technologies Ltd (TMD) - ...
Tags: TMD, EW exhibition, EW GCC 2016
Hyundai Motor is introducing H350 fuel cell concept At the 2016 IAA Commercial Vehicle Show in Hanover, Germany. Providing a glimpse into the future of the LCV, Hyundai Motor’s new H350 Fuel Cell Concept shows the suitability of the ...
Tags: Hyundai Motor, H350 fuel cell concept, 2016 IAA Commercial Vehicle Show
The Taiwan government, in line with energy saving and reduction in carbon emission policies, aims to install 200,000 low-voltage (110V) smart power meters in 2017, one million units in 2020 and three million units in 2024, according to the ...
Tags: power meters, meters
GigPeak Inc of San Jose, CA, USA (formerly GigOptix), which provides integrated circuits and software solutions for high-speed connectivity and high-quality video compression over the network and the cloud, has announced the availability ...
Tags: GigOptix, GX32222 TIA
LED chip, lamp and lighting maker Cree Inc of Durham, NC, USA has launched the XLamp XP-L2 LED, delivering up to 7% more lumens and 15% higher lumens-per-watt (LPW) than the XP-L LED. Leveraging elements of Cree's SC5 Technology Platform, ...
Tags: Cree XLEDsXLamp XP-L2 LE
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
In booth #384 at the European Conference on Optical Communications (ECOC 2016) in Düsseldorf, Germany (19-22 September), Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) is ...
Tags: Oclaro, ECOC 2016, 400GBASE-LR8 CFP8 optical transceiver
Designed as the perfect lighting solution to fit shallow plenums above ceilings in residential and light commercial settings, the new Aether IC Rated downlight from WAC Lighting is engineered with a low profile 3.5-inch LED shallow housing. ...
Tags: new Aether, WAC Lighting
In booth #384 at the European Conference on Optical Communications (ECOC 2016) in Düsseldorf, Germany (19-21 September), Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) is ...
Tags: Oclaro, CFP2-ACO transceiver
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs