In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
AWR Corp of El Segundo, CA, USA, which supplies electronic design automation (EDA) software for designing RF and high-frequency components and systems, and Modelithics Inc of Tampa, FL, USA, which provides simulation models for RF, ...
Tags: EDA Software, Electrical
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
POP-Market, which revolutionized and simplified the way the fashion wholesalers and retailers conduct business, is making wholesale even easier, arming sales reps with the only patented iPad app for fashion wholesale. Available for ...
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has released the TAT9988 gallium nitride (GaN) integrated power doubler for fast-growing CATV infrastructure applications. The new ...
Tags: TriQuint
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has launched the ACA2429 gallium nitride (GaN) power doubler surface-mount IC supporting operation up to 1.2GHz. Samples are ...
In booth #930 at the IEEE MTT International Microwave Symposium (IMS) tradeshow in Seattle, WA, USA (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) is ...
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
In its eighth year, the Shaw Contract Group Design Is… Award program honors architecture and design firms that are changing the very idea of what design is. This year, Shaw Contract Group introduced Market Awards, representing the ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex