Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Hiwin Technologies Corp. and Advantech Co., Ltd. have signed an agreement to foster?the formation of Taiwan's robot-industry cluster in order to?boost international competitiveness of Taiwan's robotic and intelligent-automation industry. ...
Tags: taiwan, Manufacturing, Processing Machinery
Morgan Advanced Materials has announced new solutions in sacrificial wear layers to extend the life of alumina or beryllia electrostatic chucks (ESCs) for semiconductor, solar and LED applications. Applied as a final protective layer, the ...
Tags: Electrical, Electronics
Ushio Inc of Tokyo, Japan (which manufactures light sources including lamps, lasers and LEDs) says that its subsidiary Ushio Opto Semiconductors Inc (established in July) has agreed to acquire the LED, red, violet and part of the infrared ...
Researchers at the Vienna University of Technology (TU Wien) in Austria have combined two semiconductor materials, each consisting of a layer just three atomic thick, to create a new structure that holds promise for a new kind of solar ...
Tags: Thin-film PV, Electrical, Electronics
Most Taiwan-based LCD driver IC vendors are expected to see their sales grow 5-15% sequentially in the third quarter, powered by orders for large-size driver ICs from LCD panel suppliers and for small- and medium-size driver IC parts from ...
Tags: LCD Driver, IC, LCD
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for wireless connectivity and cellular mobility, is unveiling a family of Nano RF products code named Nucleus. The ...
Tags: RFaxis CMOS, Electrical, Electronics
More than 10 China-based IC design houses and IC design service companies have placed 28nm chip orders at Taiwan Semiconductor Manufacturing Company (TSMC), indicating the strengthening competitiveness of China-based IC suppliers, according ...
Tags: IC suppliers, IC
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has received the National Technology and Innovation (PNTi) award from Mexico in two categories: Technology Management and Process Innovation. The PNTi is one of four ...
Tags: semiconductor, Electrical, Electronics
Osram has unveiled plans for nearly 8,000 more job losses. The announcement comes as the German lighting giant's Push programme, which launched in 2012, comes to a close. "We will successfully complete the first stage of Osram Push ...
Tags: Lights, Lighting, Electrical, Electronics, Osram
Veeco Instruments Inc. (Nasdaq: VECO) has formed a strategic partnership with Agnitron Technology, Inc., a focused compound semiconductor research and development company specializing in the refurbishment and upgrade of Veeco legacy metal ...
Tags: Electrical, Electronics, Industrial Equipment, Components
The silicon carbide (SiC) semiconductor market will increase at a compound annual growth rate (CAGR) of 42% from 2014 to $3182.89m in 2020, according to a new report from MarketsandMarkets (‘Silicon carbide (SiC) in semiconductor ...
Tags: SiC Semiconductor, Semiconductor
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors