ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end components manufactured using standard high-volume bulk CMOS processes for smart-phone and Internet of Things (IoT) applications, has closed a $35m funding ...
Tags: CMOS PAs GaAs PAs
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced new radio-frequency silicon solutions, further ...
Tags: Wireless Devices, semiconductor
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its growing line of products with the CMD232, a 2-9GHz gallium arsenide (GaAs) MMIC driver amplifier that offers high gain, wide bandwidth, ...
Tags: Driver Amplifier, Custom MMIC
Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...
SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has been ...
Tags: SPTS, ESTnet Awards
Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...
Tags: AlGalnP, Tantalum barrier, LED
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that on 20 February II-VI Inc of Saxonburg, PA, USA submitted a further revised set of proposed amendments to its original 15 January ...