Bosch Packaging Technology will display two new pharmaceutical inspection machines capable of conducting container closure integrity and high-end leak tests, during Achema 2015 to be held in Germany from June 15 to 19. While the KHS 1 ...
Tags: Leak Detection Machines, Bosch
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
LED firm Lextar Electronics has reported consolidated revenues of NT$1.178 billion (US$37.4 million) for March, increasing 11.78% sequentially and 4.92% on year, and its January-March consolidated revenues totaled NT$3.502 billion, growing ...
Tags: LED epitaxial wafers, LED chips
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
In booth 1947 at the Optical Fiber Communication conference & exposition (OFC 2015) in Los Angeles (24-26 March), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, ...
Tags: Laser Driver, Next-Gen PON
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has announced new top-side ...
Tags: GaN Systems, Power electronics, Electronics
South Korean LED maker Seoul Semiconductor has announced the availability of Acrich3 modules for a wide range of residential and commercial lighting applications. The firm says that Acrich3 enables the next generation of smart-lighting ...
CHARLOTTE, N.C., March 16, 2015 /PRNewswire/ — KEMET Corporation (NYSE: KEM), a leading global supplier of electronic components, announced its new high voltage ALC10 Series snap-in aluminum electrolyticA polarized capacitor ...
Tags: capacitors, UPS, Electronics
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
ROHM of Kyoto, Japan says that its SCT2080KE silicon carbide (SiC) MOSFET has been adopted in the new SiC-Pulser Series of ultra-high-voltage pulse generators launched by Japan's Fukushima SiC Applied Engineering Inc. Picture: ...
Tags: Pulse Generators, Generators
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...