Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
UV LED firm Seoul Viosys plans to partner with Watersprint of Medicon Village, Lund, Sweden, which develops water purification products and systems for the disinfection of bacteria, viruses and protozoa. The system will be used to supply ...
Tags: UV LEDs, Seoul Optodevice, Water Purification Technology
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Can you consider light as a product, ready to pick up from the shelf and take home? You can't touch or hold it, but being able to use it whenever needed has been vital to the progress of humanity. Light sources have progressed from candles ...
Tags: Lighting market, LED demand, displays
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
CS Clean Systems AG of Ismaning (near Munich) and centrotherm clean solutions GmbH & Co KG of Blaubeuren, Germany (both specialists in the treatment of exhaust gases in semiconductor and solar cell production processes) signed a memorandum ...
For third-quarter 2015, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $140.7m, up 51% on $93.3m a year ago although up only 7% on $131.4m last quarter (which was the ...
Tags: LED market, LCD TVs
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Veeco Instruments announced today that Asahi Kasei Microdevices (AKM), a leading electronics company headquartered in Tokyo, Japan, has purchased a GEN200® Molecular Beam Epitaxy System and S UMO® Effusion Cells for production of ...
Tags: Veeco, Asahi Kasei, MBE, IR sensor production
The average monthly price of sapphire has fallen by more than 30% year on year this September, according to the latest 2015 Global Sapphire and LED Chip Market Report by LEDinside, a division of TrendForce. This decline is the result of ...
BluGlass Ltd of Silverwater, Australia says that one of its key specialized epitaxy customers has committed to an order for about $300,000 of foundry development, to be delivered over the next six months. The customer is developing a ...
Tags: BluGlass, solar cells, LED