A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...
Tags: Power Amplifier, Cell Phones
Sol Voltaics AB of Lund, Sweden, which provides nanomaterial technology for enhancing solar panels and other products, has raised $17m in a Series C round of equity investment and grant funding, led by new investor Riyadh Valley Company ...
Tags: Solar Cell, solar panels
Materials, component and precision system supplier Ferrotec Corp of Santa Clara, CA, USA (whose Temescal division of Livermore, CA, USA makes electron-beam-based evaporative coating systems) says that a Temescal UEFC series evaporator - the ...
A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
Sol Voltaics AB of Lund, Sweden, which provides nanomaterial technology for enhancing solar panels and other products, has confirmed the successful alignment and orientation of nanowires in a thin film. The firm reckons that the achievement ...
Tags: Nanowire GaAs PV
ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end components manufactured using standard high-volume bulk CMOS processes for smart-phone and Internet of Things (IoT) applications, has closed a $35m funding ...
Tags: CMOS PAs GaAs PAs
At the SPIE Defense + Commercial Sensing (DCS 2016) event in Baltimore, MD, USA (17–21 April), Sofradir of Palaiseau near Paris, France, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), ...
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced new radio-frequency silicon solutions, further ...
Tags: Wireless Devices, semiconductor
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE