Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
On April 27, Guangdong Zhanjiang East Sea Island steel and petrochemical recycling economy expert consultation meeting is held in Zhanjiang. Many Academicians and experts give advice on speeding up East Sea Island national recycling economy ...
Tags: Steel, Petrochemical Recycling
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
LIVERMORE, Calif. & TOKYO -- Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, and Toshiba Corporation (TOKYO:6502), a world-leading electric manufacturer, today announced that they have ...
Tags: Bridgelux, Toshiba, LED Business
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
API Technologies Corp of Orlando, Florida, USA, a provider of RF/microwave, microelectronics, and security solutions, has expanded its power amplifier (PA) range to include the latest in GaN technology driven designs. This expanded line is ...
Tags: GaN Technology, API
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
Hitachi Cable has launched a new mass-production technology for GaN-templates as shown in Figures 1 and 2 below. The process allows high-quality GaN single-crystal thin film to be grown on a sapphire substrate and the company plans to ...
Tags: Hitachi Cable, LEDs
Following the December 2012 launch of the Works with Soraa program, the lighting industry’s first lamp and fixture validation program, Soraa announced the addition of nine new fixture manufacturers. The companies Excelsior Lighting, ...