Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
Beijing has an ever-growing reputation as an international city, and its population of French-speakers is significant. It was clear from all the rolling R's heard in the packed crowd at Yugong Yishan last Friday that many of them came out ...
Tags: Emilie Simon, music
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
Canada-based food company Gaston Vachon has recalled its Gaston Vachon Homestyle Meat Sauce because of a possible Clostridium botulinum bacteria contamination. The recall was initiated by ministère de l'Agriculture, des ...
This Art Deco-style Oscar Heyman ring is made in platinum and set with a 13.93-carat cushion-cut orange sapphire surrounded by 2.44 carats of diamond baguettes. It’s a period that’s so popular, and has enjoyed so many ...
Tags: Art Deco, orange sapphire
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Researchers based in China and Canada have developed single-mode ridge waveguide Fabry-Perot (RW FP) laser diodes using a pair of etched trenches that are slanted to reflect out unwanted wavelengths [Xun Li et al, Appl. Phys. Lett., vol107, ...
Tags: laser diodes, packages
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...