RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has appointed 1000Bulbs.com as an online distributor of its new MR16 lamps. Founded by ...
Tags: lamps, Electrical, Electronics
Raytheon Company of Waltham, MA, USA has been honored by the Office of the Secretary of Defense (OSD) for successful completion of a Defense Production Act (DPA) Title III gallium nitride (GaN) production improvement program, culminating ...
Tags: GaN Production, Electrical
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
API Technologies Corp of Orlando, Florida, USA, a provider of RF/microwave, microelectronics, and security solutions, has expanded its power amplifier (PA) range to include the latest in GaN technology driven designs. This expanded line is ...
Tags: GaN Technology, API
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Soraa Inc will ramp up orders with its contract manufacturers in Malaysia for its LED modules used in directional light LED lamps, riding on an approximate US$4bil (RM12.16bil) global market size for such illumination products in the ...
Tags: LED modules, LED, Lighting
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received the ‘red dot award: product design 2013’ for its ...
Tags: Soraa, GaN-on-GaN, LED Mr16 Lamp
Soraa has received the prestigious “red dot award: product design 2013” for its full-visible-spectrum SORAA VIVID LED MR16 lamp. The red dot is the international prize for high design quality. The competition’s jury only ...