Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Exhibiting for the first time at an electronic warfare (EW) exhibition in the United Arab Emirates (UAE), on stand 26 at the Electronic Warfare GCC Conference (EW GCC 2016) in Abu Dhabi (25-26 October) UK-based TMD Technologies Ltd (TMD) - ...
Tags: TMD, EW exhibition, EW GCC 2016
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology fabricated on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has added GU24 base PAR20, PAR30 (short and long neck) and PAR38 LED lamps to its LED ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that solid-state lighting manufacturer HC SemiTek Corp of Wuhan, China (which supplies full-spectrum visible light LED chips) has ordered ...
Tags: Veeco, MOCVD system, HC SemiTek
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched its second-generation gallium nitride (GaN)-based 125-200W Ka-band UltraLinear solid-state power amplifier/block ...
Tags: GaN, HEMT, Advantech Wireless, SSPA/BUC
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Northrop Grumman Corp of Redondo Beach, CA, USA has received a contract from the US Marine Corps (USMC) for an additional nine AN/TPS-80 Ground/Air Task-Oriented Radar (G/ATOR) low-rate initial production (LRIP) systems. This is the ...
Tags: Northrop Grumman.GaN-on-SiC, USMC
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which manufactures power amplifiers for the satellite industry, has added an ultra-compact, efficient, low-power-consumption gallium nitride ...
Tags: SAGE SatCom, GaN, BUC
The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...