IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Vishay Intertechnology Inc of Malvern, PA, USA has expanded its offering of mid-power UV LEDs in the 365nm wavelength range with a new device featuring a silicone lens in a compact 1.6mm by 1.6mm by 1.4mm surface-mount package. Designed to ...
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...
Tags: SiC, MOSFET, manufacturing equipment
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
At a ceremony at the UK Engineering and Physical Sciences Research Council (EPSRC) National Centre for Power Electronics Annual Conference 2016 in Nottingham, UK, a post-graduate team from Imperial College London received the £2000 ...
Tags: GaN Systems, power conversion
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its BroadRange family of wideband gallium arsenide (GaAs) MMIC distributed amplifiers with the 2-20GHz CMD238, suitable for military, space and ...
Tags: communications systems, Amplifier
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
ABB technology products – low-voltage switchgear, motor-controller, electrical panels and automated lighting systems – will be used to power the factory’s entire electrical system. The project includes the supply of Emax ...
Tags: ABB technology, electrical system, Emax 2
Samsung Electronics Co Ltd of Seoul, Korea has launched Fx-CSP - a line-up of LED packages featuring chip-scale packaging (CSP) and flexible circuit board technology - for use in automotive lighting applications. "Our new Fx-CSP line-up ...
GEW has introduced a new fully aircooled LED UV curing system for the label printing, coating and digital printing industry. The aircooled LED UV curing system lamphead LA1 is compatible with existing ArcLED systems without the need for ...
Tags: UV curing system, LED, ArcLED system
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Leveraging key elements of its SC5 Technology Platform, LED chip, lamp and lighting fixture maker Cree Inc of Durham, NC, USA has upgraded its XLamp XT-E LED family by adding a new High Efficacy (HE) option that delivers a 25% increase in ...
Tags: Cree, XLamp XT-E LEDs
At the International Symposium on 3D Power Electronics, Integration and Manufacturing Symposium in Raleigh, NC, USA (13-15 June), power management component supplier Sarda Technologies of Durham, NC, USA announced a collaboration to ...