NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
A group of lighting designers and manufacturers, researchers, and utilities have joined to ask the EPA to recognize that higher-CRI lamps can increase energy savings through broader usage even with a slightly reduced efficacy specification. ...
Tags: Lighting Coalition, EPA, High CRI Lamps
Japanese companies from Tamura Corp and Koha Co Ltd have created a white LED using gallium oxide (β-type Ga2O3) and exhibited it at Lighting Japan 2013 from Jan 16 to 18, 2013. The LED consists of a blue LED chip made on a ...
Tags: Japanese companies, LED, gallium oxide
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based makers. However, president Jacob Tam for TSMC Solid ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has announced that co-founder Eric Lidow passed away on 18 January. Born in Vilnius, Lithuania (then part of Russia) over 100 years ago in 1912, ...
Tags: Power semiconductor device, Eric Lidow, Electrical, Electronics Engineers
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
The HB-LED Standards Committee of industry association Semiconductor Equipment and Materials International (SEMI) has approved its first standard ‘SEMI HB1: Specifications for Sapphire Wafers Intended for Use for Manufacturing High ...
Tags: LED, Light, HB LED, LED devices
South Korean LED maker Seoul Semiconductor Co Ltd says that Verbatim is to launch a new range of LED-based products that are built around Seoul Semiconductor’s patented nPola technology. nPola minimizes defects in the LED chip’s ...
Verbatim will launch a new range of LED products based on Seoul Semiconductor (SSC)’s ”nPola” technology. Since 2010, Verbatim has been introducing a growing portfolio of high performance LED lamps to the lighting ...
Tags: LED Chip, LED, LED lamps, LED products
AIXTRON SE announced that China’s Focus Lightings Tech Inc. has ordered a number of CRIUS II-L systems for mass production of gallium nitride (GaN) light emitting diode (LED) epitaxial wafers. The systems will be configured to handle ...
Tags: Focus Lightings, Lighting, LED
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q4/2012 China’s Focus Lightings Tech Inc ordered multiple CRIUS II-L systems for the mass production of gallium nitride (GaN) light emitting diode (LED) ...
Tags: Lightings Orders, LEDs, Focus Lightings Tech
Taiwan’s National Chung Hsing University has used nitride semiconductor growth on gallium nitride nanocolumns and nanoporosity achieved with photoelectrochemical etching to boost the light output power of light-emitting diodes (LEDs) ...
Tags: LEDs, Air-Channels, Nanoporous Structure
GT Advanced Technologies Inc of Nashua,NH,USA(a provider of polysilicon production technology as well as sapphire and silicon crystalline growth systems and materials for the solar,LED and other specialty markets)says that it is ...
Tags: GT, structure, PV, photovoltaic equipment