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indium aluminium arsenide
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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High-Pressure Anneal for Indium Gallium Arsenide Transistors
Aug 10, 2015Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
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South Korea Developed a Gate Stack for III-V Quantum Well QW MOSFETs
May 9, 2014Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
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UCSB Researchers Have Been Studying The Effect of Using Undoped Vertical Spacers
Dec 16, 2013University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
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The UK's University of Manchester Has Used Band Engineering on InP
Jul 8, 2013The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
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MIT Extended Their Indium Arsenide Quantum Well Metal-Oxide-Semiconductor
Jan 23, 2013Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
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The Transistor Included a 2nm Gate Aluminium Oxide Insulator
Dec 14, 2012Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...
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InGaAs Devices Have Been Grown on Indium Phosphide (InP) Substrates
Dec 6, 2012Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors