Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...
Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor
The Momad Retail Forum will make up the know-how area at the new multi-sector fashion trade event, MOMAD METROPOLIS, the International Fashion Trade Show, which is organised by IFEMA and is due to take place between 6th and 8th September at ...
Tags: Retail Forum, Fashion Trade Show
GE Global Research—the technology development arm of the General Electric Co.—discussed research that, it believes, could significantly impact the design of future wind turbine blades. Using high-performance computing (HPC) to ...
Tivoli, the original innovator of linear LED solutions, The case study highlights the lighting design of the high end specialty men’s and women’s HUGO BOSS retail stores in two California locations (South Coast ...
Tags: Tivoli Lighting, LED
ETH-Zurich has reported increased maximum oscillation frequency for its indium phosphide/gallium arsenide antimonide (InP/GaAsSb) double-heterostructure bipolar transistors (DHBTs) [Rickard L?vblom et al, IEEE Electron Device Letters, ...
Researchers in China have used laser micromachining to boost light extraction efficiencies of nitride semiconductor light-emitting diodes (LEDs) by up to 46% [Bo Sun et al, J. Appl. Phys., vol113, p243104, 2013]. The team was based at ...
Tags: LED, Laser Sculpting, Electrical, Electronics
The American Institute of Architects (AIA) Committee on Architecture for Education (CAE) has selected five educational and cultural facilities for this year's CAE Educational Facility Design Awards. The CAE Design Excellence Award honors ...
The Chinese Academy of Sciences’ Institute of Semiconductors and Tsinghua University claim “the first proof-of-concept experimental demonstration of the current-driven pyramid array InGaN/GaN core-shell LEDs interconnected with ...
Tags: Pyramid-array LEDs, Graphene Electrodes, GaN, MOCVD
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
China-based researchers have reported that country's first diamond metal-semiconductor field-effect transistors (MESFETs) with RF characteristics [Feng ZhiHong et al, Science China Technological Sciences, vol56, p957, 2013]. The team was ...
Tags: Diamond MESFET MESFET Diamond, Electrical, Electronics
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
Researchers based in China and Sweden have proposed fast chemical vapor deposition (CVD) of graphene as a route to more cost-effective transparent conducting layers (TCLs) for nitride semiconductor light-emitting diodes (LEDs) [Xu Kun et ...
La-Z-Boy recognized the owners and operators of its top performing La-Z-Boy Furniture Galleries at an awards ceremony held during the recent High Point Market. "Once a year, we take the opportunity to reflect on the great achievements of ...
Tags: La-Z-Boy, Furniture, Furnishing
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer