Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
Semiconductor capital equipment provider OEM Group of Phoenix, AZ, USA has opened its new Sales and Service Center in Yokohama, Japan. Operating from this strategic central location, OEM Group Japan G.K. has doubled its staffing in the ...
Tags: Electrical, Electronics, Semiconductor
In the world of metal parts and machineries, rust and corrosion are regular frustrations. For manufacturers, rough surfaces when there shouldn't be any and the presence of contaminants are worries. Thankfully, a simple yet effective process ...
It is important to state that acid-etched glass can be used on surface 1 of the IGU, meaning it is directly exposed to the outside environment. The four acid-etch finishes that are part of the Walker Textures program, namely Satinlite, ...
Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, RFIC, semiconductor and optical industries) has launched what it claims is the first commercial line of large-diameter ...
Tags: Rubicon Sapphire substrates, LED, Electrical, Electronics
LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...
Tags: Nitride LEDs, Light
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) in Miyazaki, Japan (29 September to 4 October), SAMCO Inc of Kyoto, Japan, a supplier of etch, chemical vapour deposition (CVD) and surface treatment ...
Tags: Samco Etch, Electrical, Electronics
Semiconductor capital equipment provider OEM Group of Phoenix, AZ, USA has opened its new Sales and Service office in Hsinchu, Taiwan, complementing its existing re-manufacturing facility in Taiwan (which opened in 2010). The firm says ...
Tags: OEM Group, Electrical, Electronics