Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
24 May 2012 EPC launches eighth brick DC-DC power converter demo board featuring eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in power management applications,says that Dr David Reusch has joined its ...
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices for high-power, high-efficiency, harsh-environment power management and conversion applications) has been granted its 30th US patent ...
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN
By nestling quantum dots in an insulating egg-crate structure, researchers at the Harvard School of Engineering and Applied Sciences (SEAS) have demonstrated a robust new architecture for quantum-dot light-emitting devices (QD-LEDs). ...
Tags: Market View, led
By nestling quantum dots in an insulating egg-crate structure, researchers at the Harvard School of Engineering and Applied Sciences (SEAS) have demonstrated a robust new architecture for quantum-dot light-emitting devices (QD-LEDs). ...
Tags: led
5 June 2012 SiC drives material innovation for high-power electronics Due to its superior thermal and electrical properties, the wide-bandgap material silicon carbide (SiC) has emerged as a key enabling material that has the potential to ...
Tags: SiC material, MOSFET, performance criteria, Defense agencies