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Poet Reports Further Step Towards Commercializing Integrated Optoelectronics Technology Platform
Aug 12, 2016POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET
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POET Has Developed The Proprietary POET Platform for Monolithic Fabrication
May 29, 2014POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, Process Equipment
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Researchers in Germany Have Developed 2DHG GaN Channel Structures
May 20, 2014Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
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RWTH Aachen Reported The First Small-Signal Response Frequency Characteristics
Nov 26, 2013RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
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Researchers Have Developed Radio Frequency Switches Based on Nitride Semiconductor
Feb 1, 2013Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
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OPEL Has Produced an Integrated Laser Device
Dec 11, 2012OPEL Technologies Inc of Toronto, Ontario, Canada says that its US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT has produced an integrated laser device, achieving a key milestone in its Planar Optoelectronic Technology ...
Tags: OPEL, ODIS, POET, integrated laser device, VCL
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Latest Issue of Semiconductor Today Now Available
Jul 31, 2012Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
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Hong Kong University Has Achieved Record Maximum Drain Currents
Jul 9, 2012Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
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There Is a a Deeper Look at GaN for Power
May 28, 2012A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
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Chinese Researchers Have Demonstrated a Sag Method for Recessing Gates
May 21, 2012Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...
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11 May 2012 Record Transconductance of 1105mS/Mm for GaN/InAIN MIS-HFET
May 11, 201211 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material