Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...
Tags: raw materials
In a ceremony in Nagoya, Japan on 8 August, Gerald Stringfellow, who is a Distinguished Professor in the University of Utah's departments of materials science & engineering and electrical & computer engineering (and dean of the College of ...
Tags: LEDs, LED crystals
In a trading statement for first-half 2016, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that it expects to deliver a significant increase in revenues and profits compared with first-half 2015 and continues to ...
Tags: IQE, epiwafer foundry
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, has purchased a SICA88 SiC inspection & analysis tool made by the Lasertec Corp of Tokyo, Japan, for ...
Tags: SiC Substrate
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
The global light-emitting diode (LED) packaging equipment market will rise at a compound annual growth rate (CAGR) of almost 2% to more than $656m in 2020, according to a report by Technavio. The report considers the emergence of COB ...
Tags: LED, packaging equipment, COB
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...