GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren,NJ,USA has introduced two new power amplifiers(PAs)optimized for WCDMA,HSPA,and LTE small-cell applications,including ...
Tags: Anadigics PAs, power amplifiers, infrastructure power amplifiers
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling high-speed end-to-end information streaming over optical fiber and wireless networks) says that it is leveraging ...
Tags: GigOptix, Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping production volumes of its AWT6751 and AWT6755 dual-band ProEficient-Plus WCDMA power amplifiers (PAs) to Samsung ...
Tags: Anadigics, PAs, Electrical&Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
Bulgaria-A Martin Audio sound reinforcement system has been fitted in La Playa Bar in the seaside resort of Varna,on the Bulgarian Black Sea Coast. Part of a completely renewed interior,the dynamic new Martin Audio architectural AQ system ...
In the course of time there has been a constant change from IMT (Insert Mount Technology), i.e. the classical insertion mounting on PC boards to SMT (Surface Mount Technology), the surface mounting of the components on the PC board. ...
Tags: Heat Sinks, Industrial Equipment, Components
Northrop Grumman Corp of Redondo Beach, CA, USA has developed two new 0.1μm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) broadband three-stage high-power amplifiers ...
Tags: Northrop Grumman, High-Power MMICs
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
In booth V16 (level 10.1, Hall 10) of the ANGA-COM 2013 Exhibition & Congress for Broadband, Cable and Satellite in Cologne, Germany (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, ...
Tags: VGA, Macom Electrical
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has unveiled a portfolio of low-noise amplifiers (LNAs) that provide what is claimed to be best-in-class noise figure (a critical component to boosting weak incoming ...
Tags: Skyworks, GaAs Phemt LNAs