In advance of the Citi Technology Conference on 9 June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA updated its investor presentation to note the sale of certain RF assets formerly owned by ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received the first order from a Chinese customer for its GENxplor R&D molecular beam epitaxy (MBE) system. Nanjing University is scheduled to ...
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Osram Opto Semiconductors GmbH of Regensburg, Germany has improved the luminous efficacy of its high-power light-emitting diodes (LEDs) by as much as 7.5% by reducing the unwanted effect of efficiency droop at high currents. This ...
Tags: Osram LED, Blue High-Power LEDs
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
LED epitaxial wafer and chip maker Genesis Photonics has developed LED chips for Taiwan- and China-based makers to produce automotive Bi-bea Month Volume(Units) Value(USD) Year-on-Year ...
Tags: Test
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has completed its acquisition of broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA for about $78.2m. The ...
Tags: Anadigics, II-VI Inc, Acquisition
South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE