An international research team has been exploring the role of gate oxide border traps in devices being developed for future electronics.The researchers presented their results at the 2012 International Electron Devices Meeting[D.Lin et ...
Tags: international research team, role of gate oxide border traps
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
Belgian lab IMEC was founded on semiconductor process research,and has grown into one of the two organisations in the world that companies partner with for advanced process research.The other is IBM. TSMC partners IMEC for advanced ...
OPEL Technologies Inc of Toronto, Ontario, Canada says that its US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT has produced an integrated laser device, achieving a key milestone in its Planar Optoelectronic Technology ...
Tags: OPEL, ODIS, POET, integrated laser device, VCL
AMCAD Engineering of Limoges,France(which provides test and modelling tools for RF and microwave IC applications)has announced an upgrade to its PIV pulse current-voltage semiconductor device analyzer family for the next generation of ...
Tags: AMCAD, HVFS, transistor, GaN
University of Glasgow and UniversitéParis researchers have demonstrated for the first time RF performance of 50nm gate-length diamond field-effect transistors(FETs)[Stephen A.O.Russell et al,IEEE Electron Device Letters,published ...
Tags: Diamond, Element Six, Electrical
New 12W and 25W LED driver ICs from iWatt work with triac and electronic dimmers and achieve power factor in excess of 0.95. IWatt has introduced two new dimmable solid-state lighting (SSL) driver ...
Tags: LED driver IC
3 September 2012 EPC releases safe operating area data for its eGaN FETs Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in ...
iWatt has introduced a mains LED driver for loads up to 25W,claiming it to be flicker-less. "This new platform expands iWatta??s existing line of LED drivers,offering compatibility with an even wider range of installed dimmers,including ...
Tags: iWatt, improves Mains LED Driver, safety features, flicker-less
All American extends distribution agreement with GeneSiC Electronic component distributor All American Semiconductor has signed extended its distribution agreement with GeneSiC Semiconductor Inc of Dulles,VA,USA,which develops silicon ...
Tags: GeneSiC SiC, Distribution, Agreement
EPC launches WiTricity demo system featuring high-frequency eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
24 May 2012 EPC launches eighth brick DC-DC power converter demo board featuring eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in power management applications,says that Dr David Reusch has joined its ...