Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has announced its SiGe Terabit ...
Tags: TowerJazz RF CMOS SiGe
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Eulitha AG of Würenlingen, Switzerland (a spin-off of the Paul Scherrer Institute in Villigen that offers nano-lithographic equipment and services for photonics and optoelectronic applications) says that one of its PhableR 100 ...
Tags: Eulitha, Nanopatterning HB-LEDs
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
At the SEMI Industry Strategy Symposium Europe 2016 conference in Nice, France (6–8 March), Paul Lindner, executive technology director at EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for ...
Tags: EV Group, Engineered substrates
Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...
Keysight Technologies Inc of Santa Rosa, CA, USA (which provides electronic measurement instruments, systems and related software used in the design, development, manufacture, installation, deployment and operation of electronic equipment) ...
Tags: Keysight, oscilloscopes, InP
Future radar imaging systems and 5G communication systems will generate improved resolution and provide higher data-transmission rates when operated at higher frequencies, but at the cost of increased power consumption. To reduce power ...
The US Department of Energy's (DoE's) National Renewable Energy Laboratory (NREL), in collaboration with Washington State University (WSU) and the University of Tennessee, has improved the maximum voltage available from a cadmium telluride ...
Tags: Solar Cells, vacuum-seal
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET, Initial Market