Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that the University of Cambridge has commissioned another multi-wafer Aixtron Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material ...
Tags: CCS MOCVD System, LED
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched its full-spectrum VIVID 2 and PREMIUM 2 LED MR16 lamp lines – claimed to ...
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new ...
Tags: LED applications, LED
The Chinese government views the growth of the LED industry as a national security matter. As a result, it is driving a vast LED manufacturing effort and offering subsidies from central and local government agencies to help build its own ...
Tags: LED Industry, LED
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Soraa Inc will ramp up orders with its contract manufacturers in Malaysia for its LED modules used in directional light LED lamps, riding on an approximate US$4bil (RM12.16bil) global market size for such illumination products in the ...
Tags: LED modules, LED, Lighting
In a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers – supported by the US National Science Foundation (NSF) - have demonstrated a ...
Tags: GaN nanowires, semiconductor processing techniques, semiconductor
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
Plessey announced that samples of its GaN on silicon LED products are available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is ...
Tags: Plessey, GaN on Silicon, Lighting
Plessey's first silicon-based LEDs are relatively-low-output designs targeting the indicator and control-panel-backlight market, but the company says it will quickly deliver LEDs for general-lighting applications. Plessey has announced ...
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to ...
Tags: Silicon LEDs, LED, Lights, Lighting
GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Plessey Semiconductors has launched its first GaN-on-silicon LED product, made in its Plymouth fab. "We can offer samples of our entry-level product and we are already discussing orders," company chief operating officer Barry Dennington ...
Tags: LED Sampling, LED, Sampling