GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
Guerrilla RF Inc of Greensboro, NC, USA - which provides monolithic microwave integrated circuits (MMICs) to wireless infrastructure original equipment manufacturers - has added to its family of high-linearity gain blocks (which features a ...
In booth 1 (level 0) at the 17th Conference on Power Electronics and Applications (EPE'15 - ECCE Europe) hosted by CERN in Geneva, Swizerland (8–10 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium ...
Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2107 (100V) and ...
Tags: electronic components, semiconductor, EGaN Power, wireless power transfer
What is decribed as the first European-made device based on gallium nitride (GaN) to be sent into space has completed its second year of operations. Hosted by the European Space Agency (ESA) on its Earth-observing Proba-V mini-satellite in ...
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of gallium nitride (GaN) power amplifiers (PAs) that are said to dramatically improve the ...