Power semiconductor device maker International Rectifier Corp(IR)of El Segundo,CA,USA has appointed Gary Tanner as executive VP&chief operations officer,effective 2 January 2013. Tanner will be responsible for the continued implementation ...
Tags: power semiconductor, IR, Gary Tanner, transformation strategy
LEDnovation introduces 75W-and 100W-equivalent A-lamps,warm-on-dim BR30 28 Sep LEDnovation has developed a 100W-equivalent A-lamp that produces 1600 lm and uses 19W,while its new 75-equivalent A-lamp uses 14W to produces 1150 lm.The BR30 ...
Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
RF Micro Devices Inc of Greensboro,NC,USA has been awarded a$2.1m contract from the US Defense Advanced Research Projects Agency(DARPA)to enhance the thermal efficiency of gallium nitride(GaN)circuits used in high-power radar and other ...
Tags: RFMD, GaN technology, DAPPA, NJTT, military system
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
The Silicon Valley Intellectual Property Law Association named Shuji Nakamura the winner of its Inventor of the Year award for innovations including Soraa's Gan-on-GaN technology. The Silicon Valley Intellectual Property Law Association ...
Tags: LED
Dr.Shuji Nakamura,co-founder of Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN-on-GaN'(gallium nitride on gallium nitride)substrates,has received the Inventor of the Year Award from The Silicon ...
Ushio to sell Soraa MR16 LED lamp 31 Aug 2012 As of November 1,Ushio will begin selling the Superline LED MR16 lamps based on Soraa's GaN-on-GaN technology through Ushio's subsidiaries in Japan,Taiwan,Korea,Singapore and Germany.Ushio ...
Tags: Ushio, MR16 LED lamp, GaN-on-GaN technology
Using GaN as a substrate holds promise for many industries,but has immediate applications for light-emitting diodes(LEDs),which Soraa manufactures.A major advancement in a commercially viable new substrate is a promising disruptive ...
Soraa, dedicated in developing GaN solid-state lighting technology, has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on bulk GaN substrates development. It’s the only ARPA-E funded LED substrate ...
Tags: North America Soraa GaN Substrate DOE, Lights, Lighting
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
Product announcements during the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada in late June highlighted how military applications will continue to grow and drive the fundamental development of semiconductor ...
Tags: Military, development, IMS
Seoul Semiconductor launches nPola LED technology to boost brightness 5-10 times South Korean LED maker Seoul Semiconductor Co Ltd has unveiled a new LED product based on patented ‘nPola’ technology, which has been under ...
Tags: LEDs GaN
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012