AIXTRON SE has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si). The Award recognizes key areas of innovation surrounding the chip ...
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched its Avionics & Radar Tech Hub, a micro-website featuring the latest news, innovations and new products related to avionics and radar applications. The ...
Tags: avionics applications, radar applications, GaN transistors
According to TechNavio, one of the key factors contributing to market growth in semiconductors is the high thermal conductivity of gallium nitride over other non-silicon substrates . The gallium nitride semiconductor devices market has ...
Technologies Inc of Santa Clara,CA,USA has introduced the latest release of its high-frequency device modeling software platform,the Integrated Circuit Characterization and Analysis Program(IC-CAP).With IC-CAP 2013.01,a key improvement is ...
Tags: Agilent, IC-CAP Platform, Software
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has received a$2.7m contract from the Defense Advanced Research Projects Agency(DARPA)to triple the power handling performance of ...
Following the previous release of the RF393X series of unmatched power transistors (UPTs) targeting continuous wave (CW) and pulsed peak power applications, RF Micro Devices Inc of Greensboro, NC, USA has production released two highly ...
Tags: RFMD, GaN power transistor, unmatched power transistors, continuous wave
ON Semiconductor (Nasdaq: ONNN), a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics ...
Tags: GaN-on-Si
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
In booth 1625 at the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(19-21 June),StratEdge of San Diego,CA,USA(which designs and produces packages for microwave,millimeter-wave,and high-speed digital devices)is ...
Tags: StratEdge, CMC, Circuit Board
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
In booth 1815 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17–22 June), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching ...
Tags: TriQuint, commercial, Canada
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors