Panasonic Corp of Osaka, Japan has developed a GaN-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The firm claims that its design will for ...
Tags: Panasonic, GaN Power Transistor
Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available ...
Tags: LED products, LED
Plessey Semiconductors Ltd of Plymouth, UK says that samples of its PLW111010 gallium nitride (GaN)-on-silicon LED products are now available. Picture: Plessey's new MAGIC GaN-on-Si LED product. The entry-level products are claimed ...
Plessey Semiconductors has launched its first GaN-on-silicon LED product, made in its Plymouth fab. "We can offer samples of our entry-level product and we are already discussing orders," company chief operating officer Barry Dennington ...
Tags: LED delivers, LED Sampling, LED
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
Gallium nitride has been described as “the most important semiconductor since silicon” and is used in energy-saving LED lighting. A new £1million (or US$1,530,700) growth facility will allow University of Cambridge ...
Tags: GaN LEDs, Electrical, lighting
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the research lab CEA-Leti in Grenoble, France, has selected Veeco’s TurboDisc K465i metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED technology, LED, LEDs
TSMC Solid State Lighting in the later part of the year will put into production uncased LED, saving cost to the LED illuminate packaging sector. TSMC Solid State Lighting President Dr. Jacob Tarn pointed out that the future of indoor ...
Tags: LED Illuminant, LED, LED bulbs
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
Rubicon has been granted its "Asymmetrical Wafer Configurations and Method for Creating the Same,” U.S. Patent No. 8,389,099 by the United States Patent and Trademark Office (USPTO). The patent covers the creation of visual and ...
Tags: LED, Patent, LED manufacturers
CEA-Leti spin off Aledia, has made its first GaN LEDs on 8 inch (200mm) silicon wafers. The cost of Aledia’s LED 3D chips based on microwires is expected to be four times less than traditional planar (2D) LEDs. What's more, Aledia ...
Tags: LED 3D Chips, LED, LED chips