20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012
20 June 2012 Mitsubishi develops 170W,70%-efficiency GaN-on-Si PA for base-station transmitters Picture:Mitsubishi Electric's 170W,2.1GHz GaN-on-Si power amplifier. Tokyo-based Mitsubishi Electric Corp has developed a prototype 2GHz ...
Tags: Mitsubishi Electric Corp, GaN-on-Si PA, base-station transmitters
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Toshiba America Electronic Components Inc(TAEC)-a subsidiary of Tokyo-based semiconductor maker Toshiba Corp-has announced a Ka-band high-power gallium nitride(GaN)microwave monolithic integrated circuit(MMIC)with what it claims is one of ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
The Institute of Microelectronics(IME),a research institute of Singapore's Agency for Science,Technology and Research(A*STAR),has announced a collaboration with global power systems company Rolls-Royce for R&D on advanced power electronics ...
Tags: GaN-Based, Electronics, Power
Cree Inc of Durham,NC,USA has released an updated process design kit(PDK)based on Agilent Technologies'Advanced Design System(ADS)software that will provide microwave and RF design engineers with a comprehensive suite of design and ...
Tags: Cree, GaN-on-SiC, HEMT, PDK, Software
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
Daewon Innost has recently launched the Glaxum LED Array family of Chip-On Board modules.Based on Daewon Innost's proprietary Nano-Pore Silicon Substrate(NPSS)technology,Glaxum arrays ensure superior thermal dissipation ...
Tags: LED Lighting, Daewon Innost, Glaxum LED Arrays, NPSS, LED modules
Agilent Technologies Inc of Santa Clara,CA,USA has unveiled new technologies and developments for RF power amplifier design that will be part of the next major release of its flagship Advanced Design System electronic design ...
Tags: EDA, Software, Digital Applications, Microwave
In booth 1625 at the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(19-21 June),StratEdge of San Diego,CA,USA(which designs and produces packages for microwave,millimeter-wave,and high-speed digital devices)is ...
Tags: StratEdge, CMC, Circuit Board
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor