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Breakdown Voltages
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NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch
Oct 12, 2016Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
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Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas
Jun 20, 2016Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
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Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown
Apr 8, 2016HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
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Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes
Oct 15, 2015Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
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a New Edge Termination Technique for 4h-Sic High-Voltage Devices Has Been Developed
May 19, 2015North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
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NAIST Has Claimed The Highest Breakdown Voltage to Date for a Diamond MESFET
Oct 28, 2014Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
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Macom Launches 650W Gan-on-Sic L-Band Radar Transistor
Aug 7, 2014M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM GaN RF power transistors, transistors, Electrical, Electronics
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RF Plans to Transfer and Produce GaN
Mar 26, 2014RF Micro Devices Inc of Greensboro, NC, USA has signed a $9.7m agreement with the Manufacturing and Industrial Technologies Directorate within the US Air Force Research Laboratory (AFRL) to transfer and produce a 0.14μm gallium nitride ...
Tags: RF Micro Devices, GaN technology
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HKUST Is Developing Techniques to Monolithically Integrate HEMTs
Mar 24, 2014Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
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Researchers Has Developed a Gallium Nitride MOSHEMT
Nov 26, 2013A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
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RF Micro Devices Introduced What It Claims Are The World's First 6-Inch GaN-on-SiC Wafers
Sep 19, 2013RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
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Device Isolation Was Achieved by Nitrogen Implantation
Aug 12, 2013Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
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Japan Has Released The MB51T008A
Jul 15, 2013Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
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Researchers Have Developed Gallium Nitride (GaN) Fin Field-Effect Transistors (FinFETs)
Feb 21, 2013Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
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Aixtron SE Added a SIC CVD Warm-Wall Planetary Reactor System to Its Aixtron Equipment
Aug 30, 2012Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that Showa Denko of Chichibu,Japan has added a SiC CVD Warm-Wall Planetary Reactor system to its Aixtron equipment base,capable of handling either ten 100mm or six 150mm ...
Tags: Aixtron, Showa Denko, CVD system, deposition equipment maker