University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that China-based concentrated photovoltaic (CPV) solar cell maker Guangdong Redsolar Photovoltaic Tech Co Ltd has purchased multiple TurboDisc ...
Tags: Redsolar, MOCVD Systems
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
Driven mainly by heat spreaders for high-power device thermal management, the diamond materials market for semiconductor devices will rise at a compound annual growth rate (CAGR) of 14% to more than $43m in 2020, according to the base ...
Tags: Semiconductors, Diamond Materials
Fabless semiconductor firm Eta Devices Inc of Cambridge, MA, USA has announced availability of what it reckons is the most efficient power amplifier for mobile base stations, using new patented technology that exploits the performance ...
Tags: GaN Power Amplifier, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN-on-GaN' (gallium nitride on gallium nitride) substrates, is to open a new semiconductor fabrication plant in Buffalo, NY. In partnership with the ...
Tags: GaN-on-GaN, LED, Electrical, Electronics
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced today that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State ...
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
During the Strategies in Light Europe Investor Forum, TSMC discussed its phosphor-on-die approach to LEDs while Seoul Semiconductor discussed the market opportunity and homogenous substrate development. The Strategies in Light (SIL) ...
Tags: LED, SIL Europe, Strategies
cJapanese manufacturers are way ahead of competition in LED lighting patent applications. Nine Japanese companies have become major patentee in the LED industry, with Samsung as the sole Korean patent holder. Japanese companies have ...
Tags: LED Industry, Patent Battles
Soraa, the world leader in the development of GaN on GaN™ LED technology, announced that it has been awarded several million dollars in funding by U.S. Department of Energy’s Advanced Research Projects Agency - Energy (ARPA-E) ...
Tags: Soraa, GaN Substrates
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
Embattled Taiwanese LED packager Everlight and Japanese manufacturer Nichia both published press releases on Nov. 6, 2013 regarding their latest YAG patent dispute in China. The two companies ongoing patent wars has rekindled LED industry ...
Tags: LED Manufacturers, Lighting
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs