Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that solid-state lighting manufacturer HC SemiTek Corp of Wuhan, China (which supplies full-spectrum visible light LED chips) has ordered ...
Tags: Veeco, MOCVD system, HC SemiTek
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
For first-half 2016, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €55.5m, down 31% on first-half 2015's €80.7m, reflecting the ongoing weak demand environment in the firm's ...
Tags: Aixtron SE, MOCVD, GaN
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has ordered ...
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
For second-quarter 2016, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $75.3m, down 8.6% on $78m last quarter and 42.7% on $131.4m a year ago, consistent with ...
Tags: Veeco, LED industry
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that optoelectronics manufacturer Xiamen Changelight Co Ltd of Xiamen, Fujian Province, China has finalized qualification of its AIX R6 Close Coupled ...
Tags: Aixtron SE, Changelight, MOCVD
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics