Plasma etch, deposition and thermal wafer processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK has won two more awards against other leading companies in Wales and the South West UK. This completes a year in which the firm ...
Tags: SPTS, Electrical, Electronics, Skills Investment
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
UK-based etch, deposition and growth system maker Oxford Instruments Plasma Technology (OIPT), part of Oxford Instruments plc, has received an order from Nanoplus in Germany for an ion beam deposition and a plasma etch system for use on ...
Researchers in Guangdong province, China, have been exploring the potential for improved light extraction from nitride semiconductor light-emitting diodes (LEDs) on patterned sapphire substrates with spherical cap bumps [Haiyan Wang et al, ...
Tags: LEDs, Electrical, Electronics
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Researchers in China have developed a silicon dioxide (SiO2) on aluminium oxide (Al2O3) passivation for nitride semiconductor light-emitting diodes (LEDs) that offers more than two orders of magnitude reduced current leakage under reverse ...
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
Plasma etch, deposition and thermal wafer processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK (a Bridgepoint portfolio company) has acquired XACTIX Inc of Pittsburgh, PA, USA, which is claimed to be the market-leading ...
Tags: Electrical, Electronics
Advanced Vacuum of Lomma, Sweden, which supplies vacuum solutions ranging from plasma etch and deposition systems through chemical pump systems to thermal/vacuum environmental test chambers, has launched the Apex SLR, a robust ICP system ...
Tags: Vacuum, ICP System
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer