GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping production volumes of its AWC6340 HELP (High-Efficiency-at-Low-Power) power amplifier (PA) to Huawei for the new Ascend ...
Tags: Smartphone, Electrical, Electronics, Consumer Electronics
Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched four new gallium nitride (GaN) ...
Tags: Hittite, Electrical, Electronics
Fabless envelope tracking (ET) semiconductor firm Nujira Ltd of Cambridge, UK and specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc ...
Tags: Electrical, Electronics
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for the wireless connectivity and cellular mobility markets, has begun mass production of its RFX240 high-power 2.4GHz ...
Tags: RFaxis CMOS, Electrical, Electronics
The Electronic Packaging business unit of SCHOTT technology group of Mainz, Germany and Tesat-Spacecom GmbH of Backnang, Germany (a manufacturer of systems and equipment for telecoms via satellite) have developed a hermetically sealed ...
Tags: power amplifier, Electrical, Electronics, Satellite
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping production volumes of its AWL9280 and AWL9580 WiFi front-end ICs (FEICs) to Samsung Electronics for the new Galaxy Tab 3 ...
Tags: Samsung, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA reflected on its role in helping land NASA's Curiosity rover safely on Mars as program managers say the mission is reaching a key ...
Tags: Electrical, Electronics
In its latest report ‘Global and China GaAs Industry Report, 2012-2013’ market analayst firm Research In China summarizes that in first-half 2013 the biggest news in the gallium arsenide industry was Qualcomm’s ...
Tags: GaAs Industry, Electrical
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping production volumes of its ALT6526 pentaband power amplifier to China’s Huawei for the E5172 consumer premises ...
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA is partnering with SMC Networks, a customer premise equipment (CPE) manufacturer for multi-service operators (MSOs), to develop wireless connectivity solutions for ...
Tags: semiconductor, Electrical, Electronics
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure