Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Scientists at the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg, Germany have successfully tested power transistors made of gallium nitride (GaN) in power electronic systems. By using such transistors the researchers says ...
Tags: Fraunhofer, ISE, GaN, power transistor
Fairchild Semiconductor of San Jose CA,USA,which makes silicon chips for power and mobile designs,is exhibiting its latest in silicon carbide(SiC)technology as well as over 15 power and mobile solutions in hall A-4,booth 506 at the ...
Fairchild Semiconductor of San Jose CA, USA, which makes silicon chips for power and mobile designs, has announced silicon carbide (SiC) suitable for power conversion systems. The firm notes that, in an effort to achieve higher power ...
Tags: silicon chips, Sic Bjts, power conversion systems, semiconductor devices
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium ...
Tags: Microsemi, GaN on SiC, radio frequency transistors, HEMT
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA,is showcasing twelve new products at European Microwave Week in Amsterdam next week(29-31 October).These include new packaged ...
Silicon Valley-based Gaas Labs LLC,a private investment fund targeting the communications semiconductor market,has acquired privately held Nitronex Corp of Durham,NC,USA,which designs and makes gallium nitride(GaN)-based RF power ...
Tags: Gaas Labs, Nitronex, GaN-on-Si, RF power transistors, semiconducto
21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) claims that, after first ...
Tags: SemiSouth, USA, manufactures
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors