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Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

AgileSwitch to Be Awarded Patent for Augmented Turn-off SiC Module Switching Technique

Oct 12, 2016

AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...

Tags: SiC MOSFET, AgileSwitch LLC

EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor

Aug 31, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...

Tags: EpiGaN, GaN-on-Si, ACAPITAL

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

Freebird Partners with EPC to Develop Radiation-Hardened GaN Power Conversion Systems for Satellite and Harsh-Environment Applications

Apr 15, 2016

Freebird Semiconductor Corp of North Andover, MA, USA, which manufactures high-reliability gallium nitride (GaN) high-electron-mobility transistor (HEMT) products for power semiconductor technologies in the commercial space-flight ...

Tags: EPC E-mode GaN FETs GaN-on-Si

EPC Posts Video Series on How to Design with GaN Power Devices for Power Conversion

Feb 12, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...

Tags: EPC, E-mode GaN FETs, GaN-on-Si

VisIC Makes Available Evaluation Board and Samples for 650V GaN Power Switch

Nov 13, 2015

After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...

Tags: VisIC, transistor, semiconductor

EPC Publishes DC-DC Conversion Handbook

Sep 18, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC ...

Tags: EPC, GaN, FETs

Cree Has Launched What It Claims Is The First 900V MOSFET Platform

May 14, 2015

Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...

Tags: power products, silicon carbide

Transphorm Is Offering Engineering Samples of Its TPS3205WS Transistor

Mar 24, 2015

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...

Tags: Transphorm, APEC, Electronics

EPC Expanded Its Portfolio of Drganplus Evaluation Boards

Mar 24, 2015

To provide an easy-to-use way for power systems designers to evaluate the performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which ...

Tags: EPC, FETs, Electronics

Japan Started Mass GaN Power Devices for Switching Applications

Jan 28, 2015

Transphorm Inc, Transphorm Japan Inc, and Fujitsu Semiconductor Ltd have announced that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of gallium nitride (GaN) ...

Tags: GaN Power Devices, Electrical

EPC Launched The EPC2027 to Achieve Higher Efficiency and Power Density

Jan 15, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...

Tags: medical diagnostic equipment, solar power inverters, Electrical

EPC of EL Segundo Has Announced The Publication of The Second Edition

Oct 15, 2014

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the ...

Tags: EPC, Edition

Cree Has Expanded Its Silicon Carbide 1.2 KV Six-Pack Power Module Family

Oct 14, 2014

Cree Inc of Durham, NC, USA has expanded its silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module suited for 5-15 kW three-phase applications. Based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky ...

Tags: Cree, SiC, Electronics

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