Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
In preliminary estimates for its fiscal third-quarter 2016 (to 27 March), Cree Inc of Durham, NC, USA expects revenue of $367m, about 11.5% below the targeted $400-430m, and down from $435.8m the prior quarter and $409.5m a year ago. ...
Tags: Cree LED
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
The Fédération des Chambres de Commerce du Québec (FCCQ) for Innovation and International Market Development has named Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave ...
Tags: GaN HEMT
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched a dual-band single-pole four-throw (SP4T) WiFi switch with integrated GPIO interface and 50 Ohm match on all RF output ports. ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42723, an RF switch with what is claimed ...
Tags: Peregrine, SOI, RF switches
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MASC-37028 and MASC-37029, dual 28Gbps clock ...
Tags: M/A-COM, CDR Devices, Driver
GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced new radio-frequency silicon solutions, further ...
Tags: Wireless Devices, semiconductor
Emcore Corp of Alhambra, CA, USA – which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for the broadband and specialty fiber-optics markets – has launched the Medallion 6100 series ...
Emcore Corp of Alhambra, CA, USA – which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for the broadband and specialty fiber-optics markets – has launched the Medallion 7110 series of ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 50W Ku-band gallium nitride (GaN)-based airborne-grade solid-state power block/block up-converter ...
Tags: GaN HEMT, Advantech Wireless
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced the availability of volume shipments of its ...