Rubicon has been granted its "Asymmetrical Wafer Configurations and Method for Creating the Same,” U.S. Patent No. 8,389,099 by the United States Patent and Trademark Office (USPTO). The patent covers the creation of visual and ...
Tags: LED, Patent, LED manufacturers
Linköping University spin-off Graphensic AB of Mjrdevi Science Park, Linköping, Sweden, a supplier of graphene on silicon carbide (SiC), has appointed Jonas Nilsson as chairman of the board. Picture: Jonas Nilsson. Prior to ...
Tags: Graphensic, Nilsson chairman, FET
Tokyo-based Mitsubishi Electric Corp says it has commercialized and delivered railcar auxiliary power supply systems that incorporate the world's first silicon carbide (SiC) power modules for use in operating trains. The systems are now ...
Tags: Mitsubishi Electric, auxiliary power supply systems, Electric
Cree’s latest SiC 1200V mosfets have been designed and fabricated to offer lower cost than previous generation mosfets. The product range has been extended to include a much larger 25mOhm die aimed at the higher power module market ...
Tags: Cree, SiC Mosfets, Consumer Electronics
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
Cree, Inc. announces the release of its second-generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200-V MOSFETs deliver industry-leading power density ...
Tags: SiC MOSFET, silicon-based solutions, silicon
Americans took to the Internet Thursday as tens of thousands signed petitions on sites pleading for Google Reader's life. One of several on the Change.org online petition website had collected more than 63,000 signatures by 1:30 p.m. ET, ...
Tags: Google Reader, Google, Internet
Cree Inc of Durham, NC, USA has released its second generation SiC MOSFET. According to the firm, the new 1200V MOSFETs deliver leading power density and switching efficiency at half the cost per amp of Cree’s previous generation ...
Tags: Cree, SiC MOSFET, solar circuits
Canon U.S.A., Inc. recently launched the FPA-3030i5+ i-line stepper, designed for the manufacturing of LEDs, MEMS and power semiconductors. The FPA-3030 platform is an upgrade to earlier Canon “FPA-3000 platform” steppers. The ...
Mitsubishi Electric Corporation announced this week that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard four inch square polycrystalline silicon carbide (SiC) ingots into 40 pieces at ...
LEDs are projected to grow more than six-fold to nearly $100 billion and power conversion electronics to $15 billion over the next decade as the desire for energy efficiency drives adoption, says Lux Research. While the market opportunity ...
Tags: Electrical, Electronics, Lights, LED
Cree, Inc. announces the release of its second generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching ...
Tags: Cree, Volume Production, power applications
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched a new website resource focused on silicon carbide (SiC) technology for energy and power applications. Several Richardson RFPD suppliers are driving ...
Tags: Richardson RFPD, SiC technology, semiconductor devices
Asset advisory and auction services firm Heritage Global Partners (HGP, a subsidiary of Counsel RB Capital) and equipment auction and valuation firm The Branford Group have announced a global webcast auction of late-model silicon carbide ...
Tags: SiC manufacturing, test equipment, semiconductor manufacturing
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of its GB100XCP12-227 second-generation hybrid mini-modules using 1200V/100A SiC Schottky rectifiers ...