LED forecast plays down GaN-on-silicon impact 23 Jul 2013 Sapphire is set to remain the entrenched wafer technology for solid-state lighting, say analysts at Lux Research. Despite the transition of LED-based solid-state lighting (SSL) ...
Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...
Tags: Power Device, Electrical
Plessey Semiconductors Ltd of Plymouth, UK says that samples of a 350mW gallium nitride -on-silicon (GaN-on-Si) LED are now available. The entry-level lighting products (part number PLB010350) are manufactured on Plessey's 6-inch MAGIC ...
Tags: LED, Electrical, Electronics
Covering a roof or a facade with standard solar cells to generate electricity will change a building’s original appearance—and not always for the better (this idea to coat buildings with graphene kicks the problem up another ...
Tags: Solar Cells, Facade Design
Gallium-nitride-on-silicon architecture inches closer to sapphire-based LED performance levels but a significant gap remains. Plessey Semiconductors has announced the PLB010350 LED that it is manufactured on its gallium-nitride-on-silicon ...
Plessey Semiconductors Ltd says that samples of 350mW GaN-on-Si LEDs are now available. The entry-level lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The ...
Tags: Silicon LEDs, Plessey
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
Dr. Sun Qian, vice president of silicon substrate LED R & D department of Lattice, gave a lecture titled with "R & D and Industrialization of Silicon Substrate GaN High Power LED" to the participants on 2013 the Latest Trends in LED ...
Tags: Lattice Power, Lighting
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Toshiba Toshiba’s white LED package The two companies also announced they will ramp up a factory in Japan to make LEDs based ...
Tags: Bridgelux, GaN-on-Si Assets
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Scientists from the Niels Bohr Institut in Denmark and the Ecole Polytechnique Fédérale de Lausanne (EPFL) in Switzerland have shown that a single core–shell p–i–n junction gallium arsenide (GaAs) nanowire ...
Tags: Solar Cell, GaAs
In a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers – supported by the US National Science Foundation (NSF) - have demonstrated a ...
Tags: GaN nanowires, semiconductor processing techniques, semiconductor