Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
Instrument Systems GmbH Munich is a leader indeveloping and manufacturing high-precision light measurement systems. With the new offer of stray light correction during the calibration of array spectrometers, Instrument Systems now is the ...
Tags: Stray Light Correction, UV LEDs
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...
Tags: InGaN quantum wells, InGaN LEDs, InGaN
Whisper it softly, but, ten years since the telecom bubble burst, we may be about to witness another boom in sales of optical components for communications infrastructure. Analysts at Lightcounting, which specializes in forecasting the ...
Tags: photonic devices, telecom, datacom systems
Pricing pressures and a varied international outlook are still facts of life for industrial laser vendors, but overall demand remained in line with expectations during the first quarter of 2014. The regular survey of vendors carried ...
Tags: laser vendors, fiber lasers, semiconductor
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
Spectra Packaging has created new containers for Auld Sharkey's eco-friendly pet care products range. Made out of high-density polyethylene (HDPE), the new containers in Spectra's popular Broadway oval design come with Aptar's Small ...
The U.S. Department of Energy’s Ames Laboratory has developed a near ultra-violet and all-organic light emitting diode (OLED) that can be used as an on-chip photosensor. It’s a first in a rather specialized field of research ...
Tags: DOE, Ames Laboratory, OLED UV
The UK Department of Environment, Food and Rural Affairs' (DEFRA) report has supported the use of new video imaging and infrared technology to estimate fat content and meat quality of carcasses in abattoirs. The technology, launched in ...
Tags: Infrared Technology, meat
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics