University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
Daniel Feezell, an assistant professor in the University of New Mexico’s Department of Electrical and Computer Engineering, has received a $500,000 US National Science Foundation (NSF) Faculty Early Career Development (CAREER) award, ...
Tags: gallium nitride, Electrical
The US National Academy of Engineering (NAE) is awarding the 2015 Charles Stark Draper Prize for Engineering to Isamu Akasaki, M. George Craford, Russell Dupuis, Nick Holonyak Jr and Shuji Nakamura for “the invention, development, and ...
Tags: LED Lighting, diode applications, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has received the ‘Award of Outstanding Achievement for Global SSL ...
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that its epitaxial wafer technology has been used in conjunction with the University of California Santa Barbara (UCSB) to help develop 1.3μm-emitting quantum dot ...
Tags: silicon technology, semiconductor devices, laser components
University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...
Tags: Silicon, `Quantum Dot Lasers
If you're one of the millions of people who count losing weight among their top New Year's resolutions, you might want to pay careful attention to some new findings by UC Santa Barbara psychology professor Brenda Major. It turns out that ...
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets