Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has completed its acquisition(announced on 5 June)of the entire in-house molecular beam epitaxy(MBE)epiwafer manufacturing unit of RF Micro Devices Inc of ...
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK says that it has enhanced wafer inspection capabilities at its Cardiff facility by acquiring a new automated wafer inspection tool supplied by Nanotronics Imaging LLC of ...
Tags: IQE, Nanotronics, Inspection, Microscopy
M/A-COM Technology Solutions Inc of Lowell,MA,USA(which makes analog semiconductors,components and subassemblies for RF,microwave and millimeter-wave applications)has launched a 6-bit addition to its family of digital phase shifters for ...
Tags: MACOM Tech, USA, GaAs, CMOS
In booth 1815 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17–22 June), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching ...
Tags: TriQuint, commercial, Canada
5 June 2012 IQE acquires RFMD's MBE unit and secures seven-year wafer supply agreement Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has signed what is described as a multi-faceted agreement to acquire the entire ...
Tags: IQE, RFMD MBE, GaAs, wireless semiconductor industry
4 June 2012 Sharp develops concentrator solar cell with efficiency of 43.5% Japan's Sharp Corp has used a concentrator triple-junction III-V compound semiconductor photovoltaic cell to achieve a solar energy conversion efficiency of ...
Tags: solar cell, conversion efficiency, Sharp Corp, CPV
4 June 2012 Handset RF device market to grow from$3.8bn to$5bn in 2016 As handset RF front ends(containing gallium arsenide)are becoming increasingly sophisticated in the 4G era,they cost$9-11 for 4G devices,which is twice that for 3G and ...
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
RF and mixed-signal semiconductor maker Anadigics Inc of Warren,NJ,USA says that Tim Laverick has joined it as VP,infrastructure products,and Robert Bayruns has been promoted to VP&chief technology officer.Laverick is a business and ...
Tags: Anadigics, VP, CTO, semiconductor, microwave
Venture-backed developer of high-efficiency,multi-junction cells signs agreement with concentrated PV specialist SolFocus. SolFocus,the US-based company at the forefront of concentrated photovoltaics(CPV)systems that generate ...
Tags: Solar, SolFocus, "SUNPATH"Program
M/A-COM Technology Solutions Inc of Lowell,MA,USA(which makes analog semiconductors,components and subassemblies for RF,microwave and millimeter-wave applications)has launched an RF driver amplifier for MilCom and infrastructure ...
Tags: M/A-COM Tech, GaAs, MilCom, infrastructure applications
Fabless semiconductor firm RFaxis Inc of Irvine,CA,USA,which designs RF semiconductors and embedded antenna solutions for the wireless connectivity and cellular mobility markets,has published the white paper'CMOS Wi-Fi RF Front-Ends for ...
High Power Opto LED (HPOLED) chairman KH Huang said the company has begun mass production of blue and green LED chips on silicon substrates, making it the world's third to make blue and green LED chips on silicon substrates behind Cree and ...
Tags: Market View, led chip, led diode
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFSW6131,a gallium arsenide(GaAs)pHEMT single-pole three-throw(SP3T)switch designed for use in cellular,3G,LTE,and other high-performance communications systems.The device has a ...
Tags: RFMD, GaAs pHEMT SP3T symmetric switch, USA, GaAs