Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2101, a 60V ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
III-nitride epitaxial material supplier EpiGaN nv of Hasselt, Belgium has been named in the 2014 Global Cleantech 100's Ones to Watch list, produced by San Francisco-based Cleantech Group (whose mission is to connect corporates to ...
Osram Opto Semiconductors GmbH of Regensburg, Germany and Corning Inc announce a co-marketing agreement to promote Corning Fibrance Light-Diffusing Fiber, a first-of-its-kind technology that embeds lighting into products using Osram laser ...
Tags: Osram, Blue laser, optical fiber
UK-based Plessey has announced the realization of high-volume, large-die LED performance based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LED (HBLED) technology. The large die benefits from ...
Tags: LED Technology, LEDs
The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...
Tags: LED light, Laser system
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting at the Electronica 2014 trade fair in Munich, Germany ...
Tags: GaN Systems, semiconductors
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has introduced a compatible version of its MR16 LED lamp. Featuring ...
Funded by Germany’s Federal Ministry of Education and Research (BMBF) and coordinated by Osram Opto Semiconductors GmbH of Regensburg, Germany, the Hi-Q-LED project has made advances with green LEDs, diminishing the ‘green ...
At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has launched its next-generation metal-organic chemical vapor deposition ...
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
For its fiscal second-quarter 2015 (to 27 September 2014), RF Micro Devices Inc of Greensboro, NC, USA has reported record revenue of $362.7m, up 14.7% on $316.3m last quarter and 16.7% on $310.7m a year ago. Fiscal Q2/2014 Q3/2014 ...
Tags: RFMD, RF Micro Devices
For third-quarter 2014, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported record revenue of $272.1m, up 18% on $230.8m last quarter and up 8% on $250.8m a year ago. This ...
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED